Passivation of a Conductive System of Integrated Circuits with a Layer of Aluminum Nitride
Passivation of the film conductive system of integrated circuits makes it more reliable by increasing the resistance to electromigration. The problem of manufacturing a passivating layer on the formed current-conducting system of an integrated circuit, obtained in a single technological cycle, inclu...
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| Main Author: | |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2023-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/3641 |
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| Summary: | Passivation of the film conductive system of integrated circuits makes it more reliable by increasing the resistance to electromigration. The problem of manufacturing a passivating layer on the formed current-conducting system of an integrated circuit, obtained in a single technological cycle, including isotropic plasma-chemical etching of an aluminum alloy layer to a depth of 8–12 nm and isotropic plasma-chemical nitriding of the surface of the obtained current-carrying tracks until the aluminum nitride thickness from 10 to 50 nm, is considered. This task makes it possible to form a dielectric film based on silicon dioxide on a silicon substrate with active regions, etch contact windows to active elements of the substrate in the dielectric film, deposit a barrier layer 0.005–0.050 µm thick, and deposit an aluminum alloy film 0.5–2.0 um and much more. |
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| ISSN: | 1729-7648 |