Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models
This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As pr...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10475707/ |
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| author | Michael I. Current Takuya Sakaguchi Yoji Kawasaki Viktor Samu Anita Pongracz Luca Sinko Arpad Kerekes Zsolt Durko |
| author_facet | Michael I. Current Takuya Sakaguchi Yoji Kawasaki Viktor Samu Anita Pongracz Luca Sinko Arpad Kerekes Zsolt Durko |
| author_sort | Michael I. Current |
| collection | DOAJ |
| description | This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As profiles and various combinations of co-implants with 50 keV Phosphorus implants in Silicon(100). The effects of annealing on the 10 MeV profiles showed the strong shifts in PL data from implant damage in the as-implanted and annealed samples. Curious “intermittencies” were seen in the PL signals from MeV implant defect centers. |
| format | Article |
| id | doaj-art-b5bbf6e15ee04f39adae11b654873533 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-b5bbf6e15ee04f39adae11b6548735332025-01-29T00:00:18ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011239940610.1109/JEDS.2024.337932810475707Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC ModelsMichael I. Current0https://orcid.org/0000-0002-2354-5666Takuya Sakaguchi1Yoji Kawasaki2Viktor Samu3Anita Pongracz4Luca Sinko5Arpad Kerekes6Zsolt Durko7Current Scientific, San Jose, CA, USASMIT, Saijo, JapanSMIT, Saijo, JapanSemiLab, Budapest, HungarySemiLab, Budapest, HungarySemiLab, Budapest, HungarySemiLab, Budapest, HungarySemiLab, Budapest, HungaryThis study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As profiles and various combinations of co-implants with 50 keV Phosphorus implants in Silicon(100). The effects of annealing on the 10 MeV profiles showed the strong shifts in PL data from implant damage in the as-implanted and annealed samples. Curious “intermittencies” were seen in the PL signals from MeV implant defect centers.https://ieeexplore.ieee.org/document/10475707/Ion channelingphotoluminescence,secondary ion mass spectroscopyspreading resistance profilingMonte Carlo ion range profiles |
| spellingShingle | Michael I. Current Takuya Sakaguchi Yoji Kawasaki Viktor Samu Anita Pongracz Luca Sinko Arpad Kerekes Zsolt Durko Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models IEEE Journal of the Electron Devices Society Ion channeling photoluminescence,secondary ion mass spectroscopy spreading resistance profiling Monte Carlo ion range profiles |
| title | Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models |
| title_full | Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models |
| title_fullStr | Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models |
| title_full_unstemmed | Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models |
| title_short | Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models |
| title_sort | effects of ion channeling and co implants on ion ranges and damage in si studies with pl srp sims and mc models |
| topic | Ion channeling photoluminescence,secondary ion mass spectroscopy spreading resistance profiling Monte Carlo ion range profiles |
| url | https://ieeexplore.ieee.org/document/10475707/ |
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