RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR
When developing a technology of power device’s structure generation the breakdown voltage and the resistance of silicon substrate are constitutive parameters. Modern generation methods allow to create a structure based on fragile materials which behavior directly depends on the breakdown voltage and...
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| Format: | Article |
| Language: | Russian |
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Dagestan State Technical University
2016-07-01
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| Series: | Вестник Дагестанского государственного технического университета: Технические науки |
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| Online Access: | https://vestnik.dgtu.ru/jour/article/view/120 |
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| author | P. R. Zakharova |
| author_facet | P. R. Zakharova |
| author_sort | P. R. Zakharova |
| collection | DOAJ |
| description | When developing a technology of power device’s structure generation the breakdown voltage and the resistance of silicon substrate are constitutive parameters. Modern generation methods allow to create a structure based on fragile materials which behavior directly depends on the breakdown voltage and the resistance of chosen materials in the depth of structure. In this paper the work on determination the crystal’s channel resistance dependence of its structural parameters for the average high-voltage BSIT is done. |
| format | Article |
| id | doaj-art-b5b515385bf844aeab37099f198a2c54 |
| institution | DOAJ |
| issn | 2073-6185 2542-095X |
| language | Russian |
| publishDate | 2016-07-01 |
| publisher | Dagestan State Technical University |
| record_format | Article |
| series | Вестник Дагестанского государственного технического университета: Технические науки |
| spelling | doaj-art-b5b515385bf844aeab37099f198a2c542025-08-20T03:00:51ZrusDagestan State Technical UniversityВестник Дагестанского государственного технического университета: Технические науки2073-61852542-095X2016-07-01292152110.21822/2073-6185-2013-29-2-15-21119RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTORP. R. Zakharova0Дагестанский государственный технический университетWhen developing a technology of power device’s structure generation the breakdown voltage and the resistance of silicon substrate are constitutive parameters. Modern generation methods allow to create a structure based on fragile materials which behavior directly depends on the breakdown voltage and the resistance of chosen materials in the depth of structure. In this paper the work on determination the crystal’s channel resistance dependence of its structural parameters for the average high-voltage BSIT is done.https://vestnik.dgtu.ru/jour/article/view/120breakdown voltagestructural resistancegeneration technologystructural parameterssilicon substrate |
| spellingShingle | P. R. Zakharova RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR Вестник Дагестанского государственного технического университета: Технические науки breakdown voltage structural resistance generation technology structural parameters silicon substrate |
| title | RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR |
| title_full | RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR |
| title_fullStr | RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR |
| title_full_unstemmed | RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR |
| title_short | RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR |
| title_sort | research and the analysis of change of parameters in the channel of average high voltage bipolar static induction transistor |
| topic | breakdown voltage structural resistance generation technology structural parameters silicon substrate |
| url | https://vestnik.dgtu.ru/jour/article/view/120 |
| work_keys_str_mv | AT przakharova researchandtheanalysisofchangeofparametersinthechannelofaveragehighvoltagebipolarstaticinductiontransistor |