RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR

RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR

When developing a technology of power device’s structure generation the breakdown voltage and the resistance of silicon substrate are constitutive parameters. Modern generation methods allow to create a structure based on fragile materials which behavior directly depends on the breakdown voltage and...

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Bibliographic Details
Main Author: P. R. Zakharova
Format: Article
Language:Russian
Published: Dagestan State Technical University 2016-07-01
Series:Вестник Дагестанского государственного технического университета: Технические науки
Subjects:
breakdown voltage
structural resistance
generation technology
structural parameters
silicon substrate
Online Access:https://vestnik.dgtu.ru/jour/article/view/120
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