Tuning Electrical Conductivity and Ultrafast Optical Nonlinearity of Reduced-GO Films Ablated by Femtosecond Laser Direct Writing
Carbon-based nanomaterials with excellent electrical and optical properties are highly sought after for a plethora of hybrid applications, ranging from advanced sustainable energy storage devices to opto-electronic components. In this contribution, we examine in detail the dependence of electrical c...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
|
| Series: | Molecules |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1420-3049/30/2/348 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832587875430957056 |
|---|---|
| author | Youliang Tao Xuefeng Zhang Han Wang Zhongquan Nie Deng Pan |
| author_facet | Youliang Tao Xuefeng Zhang Han Wang Zhongquan Nie Deng Pan |
| author_sort | Youliang Tao |
| collection | DOAJ |
| description | Carbon-based nanomaterials with excellent electrical and optical properties are highly sought after for a plethora of hybrid applications, ranging from advanced sustainable energy storage devices to opto-electronic components. In this contribution, we examine in detail the dependence of electrical conductivity and the ultrafast optical nonlinearity of graphene oxide (GO) films on their degrees of reduction, as well as the link between the two properties. The GO films were first synthesized through the vacuum filtration method and then reduced partially and controllably by way of femtosecond laser direct writing with varying power doses. Subsequently, the four-point probe measurements of the reduced-GO (r-GO) films were demonstrated to exhibit superior resistivity and electrical conductivity compared with the pristine-GO counterpart. It was found that the conductivity of the film increases and then decreases with increasing ablation laser power (<i>P</i>), and GO was completely reduced at <i>P</i> = 100 mW, with a resistivity and electrical conductivity of 1.09 × 10<sup>−3</sup> Ω·m and 9.19 × 10<sup>2</sup> S/m, respectively. GO was over-reduced at <i>P</i> = 120 mW, with its resistivity and electrical conductivity being 3.72 × 10<sup>−3</sup> Ω·m and 2.69 × 10<sup>2</sup> S/m, respectively. We further tested the ultrafast optical nonlinearity (ONL) of the as-prepared pristine and reduced GO with the femtosecond Z-scan technique. The results show that the behavior of ONL is reversed whenever GO is reduced in a controlled manner. More interestingly, the higher the ablation laser power is, the stronger the optical nonlinearity of r-GO is. In particular, the nonlinear absorption and refraction coefficients of the r-GO films reach up to 3.26 × 10<sup>−8</sup> m/W and −1.12 × 10<sup>−13</sup> m<sup>2</sup>/W when <i>P</i> = 120 mW. The nonlinear absorption and refraction coefficients reach 1.9 × 10<sup>−8</sup> m/W and −3 × 10<sup>−13</sup> m<sup>2</sup>/W, respectively, for <i>P</i> = 70 mW. GO/r-GO thin films with tunable photovoltaic response properties have potential for a wide range of applications in microelectronic circuits, energy, and environmental sustainability. |
| format | Article |
| id | doaj-art-b4a2e35e5f694f94ac0e0d1a37d5b1ff |
| institution | Kabale University |
| issn | 1420-3049 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj-art-b4a2e35e5f694f94ac0e0d1a37d5b1ff2025-01-24T13:43:43ZengMDPI AGMolecules1420-30492025-01-0130234810.3390/molecules30020348Tuning Electrical Conductivity and Ultrafast Optical Nonlinearity of Reduced-GO Films Ablated by Femtosecond Laser Direct WritingYouliang Tao0Xuefeng Zhang1Han Wang2Zhongquan Nie3Deng Pan4College of Aeronautics and Astronautics, Taiyuan University of Technology, Taiyuan 030024, ChinaInstitute of New Carbon Materials, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, ChinaCollege of Aeronautics and Astronautics, Taiyuan University of Technology, Taiyuan 030024, ChinaKey Lab. of Advanced Transducers and Intelligent Control System, Ministry of Education and Shanxi Province, College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, ChinaInformation Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, ChinaCarbon-based nanomaterials with excellent electrical and optical properties are highly sought after for a plethora of hybrid applications, ranging from advanced sustainable energy storage devices to opto-electronic components. In this contribution, we examine in detail the dependence of electrical conductivity and the ultrafast optical nonlinearity of graphene oxide (GO) films on their degrees of reduction, as well as the link between the two properties. The GO films were first synthesized through the vacuum filtration method and then reduced partially and controllably by way of femtosecond laser direct writing with varying power doses. Subsequently, the four-point probe measurements of the reduced-GO (r-GO) films were demonstrated to exhibit superior resistivity and electrical conductivity compared with the pristine-GO counterpart. It was found that the conductivity of the film increases and then decreases with increasing ablation laser power (<i>P</i>), and GO was completely reduced at <i>P</i> = 100 mW, with a resistivity and electrical conductivity of 1.09 × 10<sup>−3</sup> Ω·m and 9.19 × 10<sup>2</sup> S/m, respectively. GO was over-reduced at <i>P</i> = 120 mW, with its resistivity and electrical conductivity being 3.72 × 10<sup>−3</sup> Ω·m and 2.69 × 10<sup>2</sup> S/m, respectively. We further tested the ultrafast optical nonlinearity (ONL) of the as-prepared pristine and reduced GO with the femtosecond Z-scan technique. The results show that the behavior of ONL is reversed whenever GO is reduced in a controlled manner. More interestingly, the higher the ablation laser power is, the stronger the optical nonlinearity of r-GO is. In particular, the nonlinear absorption and refraction coefficients of the r-GO films reach up to 3.26 × 10<sup>−8</sup> m/W and −1.12 × 10<sup>−13</sup> m<sup>2</sup>/W when <i>P</i> = 120 mW. The nonlinear absorption and refraction coefficients reach 1.9 × 10<sup>−8</sup> m/W and −3 × 10<sup>−13</sup> m<sup>2</sup>/W, respectively, for <i>P</i> = 70 mW. GO/r-GO thin films with tunable photovoltaic response properties have potential for a wide range of applications in microelectronic circuits, energy, and environmental sustainability.https://www.mdpi.com/1420-3049/30/2/348femtosecond laserreduced graphene oxide filmsenergy storage deviceselectrical conductivityultrafast optical nonlinearity |
| spellingShingle | Youliang Tao Xuefeng Zhang Han Wang Zhongquan Nie Deng Pan Tuning Electrical Conductivity and Ultrafast Optical Nonlinearity of Reduced-GO Films Ablated by Femtosecond Laser Direct Writing Molecules femtosecond laser reduced graphene oxide films energy storage devices electrical conductivity ultrafast optical nonlinearity |
| title | Tuning Electrical Conductivity and Ultrafast Optical Nonlinearity of Reduced-GO Films Ablated by Femtosecond Laser Direct Writing |
| title_full | Tuning Electrical Conductivity and Ultrafast Optical Nonlinearity of Reduced-GO Films Ablated by Femtosecond Laser Direct Writing |
| title_fullStr | Tuning Electrical Conductivity and Ultrafast Optical Nonlinearity of Reduced-GO Films Ablated by Femtosecond Laser Direct Writing |
| title_full_unstemmed | Tuning Electrical Conductivity and Ultrafast Optical Nonlinearity of Reduced-GO Films Ablated by Femtosecond Laser Direct Writing |
| title_short | Tuning Electrical Conductivity and Ultrafast Optical Nonlinearity of Reduced-GO Films Ablated by Femtosecond Laser Direct Writing |
| title_sort | tuning electrical conductivity and ultrafast optical nonlinearity of reduced go films ablated by femtosecond laser direct writing |
| topic | femtosecond laser reduced graphene oxide films energy storage devices electrical conductivity ultrafast optical nonlinearity |
| url | https://www.mdpi.com/1420-3049/30/2/348 |
| work_keys_str_mv | AT youliangtao tuningelectricalconductivityandultrafastopticalnonlinearityofreducedgofilmsablatedbyfemtosecondlaserdirectwriting AT xuefengzhang tuningelectricalconductivityandultrafastopticalnonlinearityofreducedgofilmsablatedbyfemtosecondlaserdirectwriting AT hanwang tuningelectricalconductivityandultrafastopticalnonlinearityofreducedgofilmsablatedbyfemtosecondlaserdirectwriting AT zhongquannie tuningelectricalconductivityandultrafastopticalnonlinearityofreducedgofilmsablatedbyfemtosecondlaserdirectwriting AT dengpan tuningelectricalconductivityandultrafastopticalnonlinearityofreducedgofilmsablatedbyfemtosecondlaserdirectwriting |