Radiation-Hardened 16T SRAM Cell with Improved Read and Write Stability for Space Applications

Radiation-Hardened 16T SRAM Cell with Improved Read and Write Stability for Space Applications

The critical charge of sensitive nodes decreases as transistors scale down with the advancement of CMOS technology, making SRAM cells more susceptible to soft errors in the space industry. When a radiation particle strikes a sensitive node of a conventional 6T SRAM cell, a single event upset (SEU) c...

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Bibliographic Details
Main Authors: Jong-Yeob Oh, Sung-Hun Jo
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Applied Sciences
Subjects:
critical charge
radiation robustness
read stability
single-event multi-node upsets (SEMNUs)
single event upset (SEU)
write access time
Online Access:https://www.mdpi.com/2076-3417/14/24/11940
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