Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation

Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation

Thermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In this study, nanocrystalline diamond (NCD) pas...

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Bibliographic Details
Main Authors: Yu Fu, Songyuan Song, Zeyang Ren, Liaoliang Zhu, Jinfeng Zhang, Kai Su, Junfei Chen, Tao Zhang, Weidong Zhu, Junpeng Li, Weidong Man, Yue Hao, Jincheng Zhang
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Crystals
Subjects:
nanocrystalline diamond
GaN
HEMT
heat dissipation
Online Access:https://www.mdpi.com/2073-4352/15/3/242
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