Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices

Abstract Multidimensional power devices can achieve performance beyond conventional limits by deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in many wide‐bandgap (WBG) and ultra‐wide bandgap (UWBG) semiconductors is the difficulty of native p‐type doping. Here the...

Full description

Saved in:
Bibliographic Details
Main Authors: Yunwei Ma, Yuan Qin, Matthew Porter, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, Yuhao Zhang
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Electronic Materials
Subjects:
gallium oxide
high voltage
nickel oxide
power electronics
power semiconductor devices
ultra‐wide bandgap
Online Access:https://doi.org/10.1002/aelm.202300662
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1002/aelm.202300662

Similar Items