Scaling, Leakage Current Suppression, and Simulation of Carbon Nanotube Field-Effect Transistors

Scaling, Leakage Current Suppression, and Simulation of Carbon Nanotube Field-Effect Transistors

Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppression of short-channel effects. However, CNT FETs wi...

Full description

Saved in:
Bibliographic Details
Main Authors: Weixu Gong, Zhengyang Cai, Shengcheng Geng, Zhi Gan, Junqiao Li, Tian Qiang, Yanfeng Jiang, Mengye Cai
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Nanomaterials
Subjects:
carbon nanotube field-effect transistor
leakage current
TCAD simulation
vertically stacked structure
sidewall gate structure
Online Access:https://www.mdpi.com/2079-4991/15/15/1168
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://www.mdpi.com/2079-4991/15/15/1168

Similar Items