GAN-Based Super-Resolution in Linear R-SAM Imaging for Enhanced Non-Destructive Semiconductor Measurement

GAN-Based Super-Resolution in Linear R-SAM Imaging for Enhanced Non-Destructive Semiconductor Measurement

The precise identification and non-destructive measurement of structural features and defects in semiconductor wafers are essential for ensuring process integrity and sustaining high yield in advanced manufacturing environments. Unlike conventional measurement techniques, scanning acoustic microscop...

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Bibliographic Details
Main Authors: Thi Thu Ha Vu, Tan Hung Vo, Trong Nhan Nguyen, Jaeyeop Choi, Le Hai Tran, Vu Hoang Minh Doan, Van Bang Nguyen, Wonjo Lee, Sudip Mondal, Junghwan Oh
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Applied Sciences
Subjects:
rotary scanning acoustic microscopy
super-resolution
semiconductor measurements
Online Access:https://www.mdpi.com/2076-3417/15/12/6780
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