Distribution of concentration of impurities and "impurity–vacancy" complexes beyond the range of ions during implantation
Spatial distribution of implanted atoms and point defects created by irradiation is calculated beyond the range of ions in the crystal with impurities. Diffuse movement of defects and impurities, their capture by their effluents, the processes of recombination defects, formation and decay of complex...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2017-08-01
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| Series: | Ядерна фізика та енергетика |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/18.1/html/18.1.0043.html |
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