Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride
Abstract In this report, the advanced manufacturing advantages of using supersaturated chlorinated chemistry are demonstrated at 1550 °C in 4H‐silicon carbide (4H‐SiC) epitaxy on trenches with different geometric profiles. Sloped mesa sidewalls (8°) show improved filling behavior compared with verti...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-11-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202400466 |
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