Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Abstract In this report, the advanced manufacturing advantages of using supersaturated chlorinated chemistry are demonstrated at 1550 °C in 4H‐silicon carbide (4H‐SiC) epitaxy on trenches with different geometric profiles. Sloped mesa sidewalls (8°) show improved filling behavior compared with verti...

Full description

Saved in:
Bibliographic Details
Main Authors: Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah
Format: Article
Language:English
Published: Wiley-VCH 2024-11-01
Series:Advanced Materials Interfaces
Subjects:
chemical vapor deposition
semiconductors
silicon carbide
superjunction
trench filling epitaxy
Online Access:https://doi.org/10.1002/admi.202400466
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1002/admi.202400466

Similar Items