Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset

Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset

Abstract This study developed a novel approach based on separated artificial neural networks (ANNs) to efficiently and accurately model the drain current (I D )–gate voltage (V G ) characteristics of silicon carbide (SiC) power MOSFETs efficiently and accurately. We found that a single ANN cannot mo...

Full description

Saved in:
Bibliographic Details
Main Authors: Manopat Chankla, Bang-Ren Chen, Shivendra Kumar Singh, Yogesh Singh Chauhan, Wen-Jay Lee, Nan-Yow Chen, Songphol Kanjanachuchai, Tian-Li Wu
Format: Article
Language:English
Published: Nature Portfolio 2025-05-01
Series:Scientific Reports
Subjects:
ANN
Machine learning
SiC MOSFET
TCAD
TCAD-augmented machine learning
Transfer characteristics
Online Access:https://doi.org/10.1038/s41598-025-03005-8
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1038/s41598-025-03005-8

Similar Items