Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers

It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In ad...

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Bibliographic Details
Main Authors: Yuanlong Fan, Jing Zhang, K. Alan Shore
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Photonics
Subjects:
Online Access:https://www.mdpi.com/2304-6732/11/11/1037
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