Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon

In this study, a numerical simulation of the tunnel effect in the n-GaN/p-Si heterostructure has been performed. Variations of band diagrams, current-voltage characteristics and cutoff frequencies of the diode heterostructures under study were obtained depending on the doping levels of GaN and Si. T...

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Bibliographic Details
Main Authors: Barykin Dmitrii, Shugurov Konstantin, Mozharov Alexey, Mukhin Ivan
Format: Article
Language:English
Published: Peter the Great St.Petersburg Polytechnic University 2024-09-01
Series:St. Petersburg Polytechnical University Journal: Physics and Mathematics
Subjects:
Online Access:https://physmath.spbstu.ru/article/2024.74.05/
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