High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm
The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task we...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2020-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/93 |
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