Probing structural alterations in shock compressed GaAs
Bandgap engineering through the control of strain can be accomplished through many means, such as applying strain epitaxially that typically requires complicated growth and/or material processing. An alternative is applying a one-time shock wave to GaAs, transforming the material to a precisely cont...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0249899 |
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