A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts

A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts

In this work, a high-performance nanoscale complementary low Schottky barrier (CLSB) nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on dual metal silicide source/drain (S/D) contacts (CLSB-NBRFET) is proposed. It is designed with Source floating gate (SFG) and drain...

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Bibliographic Details
Main Authors: Liu Xi, Ya Wang, Meile Wu, Lin Qi, Mengmeng Li, Shouqiang Zhang, Xiaoshi Jin
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Nanoscale
nonvolatile
complementary low Schottky barrier
bidirectional
RFET
Online Access:https://ieeexplore.ieee.org/document/10261975/
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https://ieeexplore.ieee.org/document/10261975/

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