Evaluating current sensing methods for accurate characterization in small chip size SiC MOSFETs
Wide Bandgap power devices, such as SiC MOSFETs, offer superior switching performance, making them essential in high-frequency power systems. This study compares two current sensing methods—Coaxial Shunt Resistor (CSR) and Split-Core Current Probe (SCP) and evaluates their impact on switching charac...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-06-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000276 |
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