Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a thresh...

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Bibliographic Details
Main Authors: Wenyang Zhang, Li Lu, Chenfei Li, Weijie Jiang, Wenzhao Wang, Xingqiang Liu, Ablat Abliz, Da Wan
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Amorphous indium gallium tin oxide (a-IGTO)
thin-film transistors (TFTs)
N doping
bias stress stability
low frequency noise (LFN)
Online Access:https://ieeexplore.ieee.org/document/10587190/
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Summary:Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a threshold voltages (<inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula>) closer to 0 V with almost no decline in mobility. In particular, the positive/negative bias stress threshold shift of N-doped a-IGTO TFTs is substantially reduced in both dark and light environment. The X-ray photoelectron spectroscopy analysis (XPS) and low frequency noise (LFN) are employed to study the mechanism of N-doping in a-IGTO TFTs. The XPS results indicate that appropriate amount of N-doping could enhance the bias stress stability and control the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula> efficiently by passivating the defects such as oxygen vacancy in a-IGTO films. The LFN results illustrate that the average interfacial trap density could be reduced by N-doping. Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays.
ISSN:2168-6734

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