Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors
Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment exhibit superior bias stress stability and a thresh...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10587190/ |
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