SIMULATION OF STATIC AND DYNAMIC LOSSES IN MOSFET KEYS

SIMULATION OF STATIC AND DYNAMIC LOSSES IN MOSFET KEYS

Issues of modeling of losses in MOSFET keys from the Electronics Workbench (EWB) program library as well as optimization of the power key operation mode are considered. A number of important facts have been obtained by using the EWB program of circuit simulation, which should be taken into account w...

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Bibliographic Details
Main Authors: V. P. Babenko, V. K. Bityukov, V. V. Kuznetsov, D. S. Simachkov
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2018-02-01
Series:Российский технологический журнал
Subjects:
mosfet-ключ
simulation
static loss
dynamic loss
mosfet key
open transistor channel resistance
input capacitance
miller effect
switching losses
circuit simulation
driver
total gate charge
switch on time
switch off time
Online Access:https://www.rtj-mirea.ru/jour/article/view/98
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