APA (7th ed.) Citation

Deshpande, G., Ajayan, J., Bhattacharya, S., Mounika, B., Dwivedi, A. K., & Nirmal, D. Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems. Elsevier.

Chicago Style (17th ed.) Citation

Deshpande, Gauri, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, and D. Nirmal. Impact of Gate Metals/high-K Materials and Lateral Scaling on the Performance of AlN/GaN/AlGaN-MOSHEMT on SiC Wafer for Future Microwave Power Amplifiers in RADAR & Communication Systems. Elsevier.

MLA (9th ed.) Citation

Deshpande, Gauri, et al. Impact of Gate Metals/high-K Materials and Lateral Scaling on the Performance of AlN/GaN/AlGaN-MOSHEMT on SiC Wafer for Future Microwave Power Amplifiers in RADAR & Communication Systems. Elsevier.