Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems

Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems

An innovative GaN-channel MOSHEMT (Metal-oxide-semiconductor-high-electron-mobility-transistor) featuring AlGaN aback barrier and AlN barrier is reported. The impact of high-K dielectric materials (HfO2: K = 25, ZrO2: K = 30 and TiO2: K = 80), oxide thickness (tox), gate metals (Al: ϕm=4.3 eV, Ti: ϕ...

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Bibliographic Details
Main Authors: Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Results in Engineering
Subjects:
2DEG
Back barrier
Gate work function (ϕm)
High-K dielectrics
Wide bandgap
Online Access:http://www.sciencedirect.com/science/article/pii/S2590123025002440
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