Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals
Abstract Hafnium oxide (HfO2)‐based devices have been extensively evaluated for high‐speed and low‐power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co‐doping HfO2 thin films on the ferroelectric characteristics of hafnium‐based devices is investigated. Among devices...
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| Format: | Article |
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Wiley
2025-01-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202410765 |
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| author | Zhenhai Li Shuqi Tang Tianyu Wang Yongkai Liu Jialin Meng Jiajie Yu Kangli Xu Ruihong Yuan Hao Zhu Qingqing Sun Shiyou Chen David Wei Zhang Lin Chen |
| author_facet | Zhenhai Li Shuqi Tang Tianyu Wang Yongkai Liu Jialin Meng Jiajie Yu Kangli Xu Ruihong Yuan Hao Zhu Qingqing Sun Shiyou Chen David Wei Zhang Lin Chen |
| author_sort | Zhenhai Li |
| collection | DOAJ |
| description | Abstract Hafnium oxide (HfO2)‐based devices have been extensively evaluated for high‐speed and low‐power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co‐doping HfO2 thin films on the ferroelectric characteristics of hafnium‐based devices is investigated. Among devices with different La/Al ratios, the Al and La co‐doped hafnium oxide (HfAlAO) device with 4.2% Al and 2.17% La exhibited the excellent remanent polarization and thermostability. Meanwhile, first principal analyses verified that hafnium‐based thin films with 4.2% Al and 2.17% La promoted the formation of the o‐phase against the paraelectric phase, providing theoretical support for supporting experimental results. Furthermore, a vertical ferroelectric HfO2 memory based on 3D macaroni architecture is reported. The devices show excellent ferroelectric characteristics of 22 µC cm−2 under 4.5 MV cm−1 and minimal coercive field of ≈1.6 V. In addition, the devices exhibit great memory performance, including the response speed of device can achieve 20 ns and endurance characteristic can achieve 1010 cycles. |
| format | Article |
| id | doaj-art-aa650d04b31745c4a726b9ead86d3f6f |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley |
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| series | Advanced Science |
| spelling | doaj-art-aa650d04b31745c4a726b9ead86d3f6f2025-01-29T09:50:19ZengWileyAdvanced Science2198-38442025-01-01124n/an/a10.1002/advs.202410765Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric CrystalsZhenhai Li0Shuqi Tang1Tianyu Wang2Yongkai Liu3Jialin Meng4Jiajie Yu5Kangli Xu6Ruihong Yuan7Hao Zhu8Qingqing Sun9Shiyou Chen10David Wei Zhang11Lin Chen12School of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Integrated Circuits, State Key Laboratory of Crystal Materials Shandong University Jinan 250100 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaSchool of Microelectronics, Fudan University State Key Laboratory of Integrated Chips and Systems Shanghai 200433 P. R. ChinaAbstract Hafnium oxide (HfO2)‐based devices have been extensively evaluated for high‐speed and low‐power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co‐doping HfO2 thin films on the ferroelectric characteristics of hafnium‐based devices is investigated. Among devices with different La/Al ratios, the Al and La co‐doped hafnium oxide (HfAlAO) device with 4.2% Al and 2.17% La exhibited the excellent remanent polarization and thermostability. Meanwhile, first principal analyses verified that hafnium‐based thin films with 4.2% Al and 2.17% La promoted the formation of the o‐phase against the paraelectric phase, providing theoretical support for supporting experimental results. Furthermore, a vertical ferroelectric HfO2 memory based on 3D macaroni architecture is reported. The devices show excellent ferroelectric characteristics of 22 µC cm−2 under 4.5 MV cm−1 and minimal coercive field of ≈1.6 V. In addition, the devices exhibit great memory performance, including the response speed of device can achieve 20 ns and endurance characteristic can achieve 1010 cycles.https://doi.org/10.1002/advs.2024107653D macaroni architectureAl and La co‐dopingferroelectricityhafnium‐based devicehigh endurance cycles |
| spellingShingle | Zhenhai Li Shuqi Tang Tianyu Wang Yongkai Liu Jialin Meng Jiajie Yu Kangli Xu Ruihong Yuan Hao Zhu Qingqing Sun Shiyou Chen David Wei Zhang Lin Chen Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals Advanced Science 3D macaroni architecture Al and La co‐doping ferroelectricity hafnium‐based device high endurance cycles |
| title | Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals |
| title_full | Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals |
| title_fullStr | Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals |
| title_full_unstemmed | Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals |
| title_short | Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals |
| title_sort | effect of lanthanum aluminum co doping on structure of hafnium oxide ferroelectric crystals |
| topic | 3D macaroni architecture Al and La co‐doping ferroelectricity hafnium‐based device high endurance cycles |
| url | https://doi.org/10.1002/advs.202410765 |
| work_keys_str_mv | AT zhenhaili effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT shuqitang effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT tianyuwang effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT yongkailiu effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT jialinmeng effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT jiajieyu effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT kanglixu effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT ruihongyuan effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT haozhu effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT qingqingsun effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT shiyouchen effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT davidweizhang effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals AT linchen effectoflanthanumaluminumcodopingonstructureofhafniumoxideferroelectriccrystals |