Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals

Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals

Abstract Hafnium oxide (HfO2)‐based devices have been extensively evaluated for high‐speed and low‐power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co‐doping HfO2 thin films on the ferroelectric characteristics of hafnium‐based devices is investigated. Among devices...

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Main Authors: Zhenhai Li, Shuqi Tang, Tianyu Wang, Yongkai Liu, Jialin Meng, Jiajie Yu, Kangli Xu, Ruihong Yuan, Hao Zhu, Qingqing Sun, Shiyou Chen, David Wei Zhang, Lin Chen
Format: Article
Language:English
Published: Wiley 2025-01-01
Series:Advanced Science
Subjects:
3D macaroni architecture
Al and La co‐doping
ferroelectricity
hafnium‐based device
high endurance cycles
Online Access:https://doi.org/10.1002/advs.202410765
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https://doi.org/10.1002/advs.202410765

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