Advanced Fabrication of 56 Gbaud Electro-Absorption Modulated Laser (EML) Chips Integrated with High-Speed Silicon Photonic Substrates

Advanced Fabrication of 56 Gbaud Electro-Absorption Modulated Laser (EML) Chips Integrated with High-Speed Silicon Photonic Substrates

With the rapid growth of data center demand driven by AI, high-speed optical modules (such as 800G and 1.6T) have become critical components. Traditional 800G modules face issues such as complex processes and large sizes due to the separate packaging of EML chips, AlN substrates, and capacitors. Thi...

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Bibliographic Details
Main Authors: Liang Li, Yifan Xiao, Weiqi Wang, Chenggang Guan, Wengang Yao, Yuming Zhang, Xuan Chen, Qiang Wan, Chaoqiang Dong, Xinyuan Xu
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Photonics
Subjects:
high-speed optical modules
EML chips
silicon-based integrated carriers
COC packaging
Online Access:https://www.mdpi.com/2304-6732/12/4/329
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