An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap
In this paper, the threshold voltage (<inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula>) of Schottky barrier field effect transistors (SBFETs) based on ultra-thin silicon on insulator (SOI) wafer shift induced by electrical...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11015469/ |
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