An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap

An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap

In this paper, the threshold voltage (<inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula>) of Schottky barrier field effect transistors (SBFETs) based on ultra-thin silicon on insulator (SOI) wafer shift induced by electrical...

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Main Authors: Tiexin Zhang, Fanyu Liu, Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu, Jing Wan, Yong Xu, Shi Li, Yuyang Ding, Bo Li, Zhengsheng Han, Tianchun Ye
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Deep-level interface trap
electric stress annealing effect
Id-Vg
SBFET
Schottky contact
total ionizing dose effect
Online Access:https://ieeexplore.ieee.org/document/11015469/
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