An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap

An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap

In this paper, the threshold voltage (<inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula>) of Schottky barrier field effect transistors (SBFETs) based on ultra-thin silicon on insulator (SOI) wafer shift induced by electrical...

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Main Authors: Tiexin Zhang, Fanyu Liu, Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu, Jing Wan, Yong Xu, Shi Li, Yuyang Ding, Bo Li, Zhengsheng Han, Tianchun Ye
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Deep-level interface trap
electric stress annealing effect
Id-Vg
SBFET
Schottky contact
total ionizing dose effect
Online Access:https://ieeexplore.ieee.org/document/11015469/
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Summary:In this paper, the threshold voltage (<inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula>) of Schottky barrier field effect transistors (SBFETs) based on ultra-thin silicon on insulator (SOI) wafer shift induced by electrical test is analyzed. Repeated testing gives rise to a positive shift of the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula>, which is similar to the constant voltage stress effect found in two-dimensional materials. The series resistance of Source and Drain (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {sd}}$ </tex-math></inline-formula>), mobility (<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>), and trapped charge are studied. The positive <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm {th}}$ </tex-math></inline-formula> is independent of the <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {sd}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>, but related to the deep-level acceptor interface trap, which is charged during the test. The main reason for trap charging is that the Source and Drain contact prepared by metal deposition cannot provide electrons for trap capturing before testing. In order to compensate for the <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm {th}}$ </tex-math></inline-formula> induced by the test, a deep-level trap charging method is proposed. The necessity of this new test method is verified by irradiation experiments.
ISSN:2169-3536

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