Current-Voltage Modeling of Transistors Based on Two-Dimensional Molybdenum Disulfide
This paper presents a compact model for the current-voltage (I–V) characteristics of field-effect transistors (FETs) based on two-dimensional molybdenum disulfide (MoS2) channels. The proposed model is fully analytical, explicit, and physics-based, ensuring compatibility with circuit simu...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11106435/ |
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