Current-Voltage Modeling of Transistors Based on Two-Dimensional Molybdenum Disulfide

Current-Voltage Modeling of Transistors Based on Two-Dimensional Molybdenum Disulfide

This paper presents a compact model for the current-voltage (I–V) characteristics of field-effect transistors (FETs) based on two-dimensional molybdenum disulfide (MoS2) channels. The proposed model is fully analytical, explicit, and physics-based, ensuring compatibility with circuit simu...

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Bibliographic Details
Main Authors: Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi, Murilo A. Romero
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Nanotransistors
molybdenum disulfide
compact model
analytical model
two-dimensional materials
Online Access:https://ieeexplore.ieee.org/document/11106435/
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