Ultrathin (<10 nm) Electrochemical Random‐Access Memory that Overcomes the Tradeoff between Robust Weight Update and Speed in Neuromorphic Systems

Ultrathin (<10 nm) Electrochemical Random‐Access Memory that Overcomes the Tradeoff between Robust Weight Update and Speed in Neuromorphic Systems

Electrochemical random‐access memory (ECRAM) devices are a promising candidate for neuromorphic computing, as they mimic synaptic functions by modulating conductance through ion migration. However, the use of a thick electrolyte layer (>40 nm) in conventional ECRAMs leads to an unavoidable tradeo...

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Bibliographic Details
Main Authors: Seonuk Jeon, Seokjae Lim, Nir Tessler, Jiyong Woo
Format: Article
Language:English
Published: Wiley 2025-08-01
Series:Advanced Intelligent Systems
Subjects:
electrochemical random‐access memory
neuromorphic computing system
numerical modeling and analysis
synaptic device characteristics
synaptic linearity and symmetry
Online Access:https://doi.org/10.1002/aisy.202500416
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https://doi.org/10.1002/aisy.202500416

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