Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional Semiconductors
ABSTRACT Two‐dimensional (2D) materials, such as MoS2, show exceptional potential for next‐generation electronics. However, the poor stability of these materials, particularly under long‐term operations and high temperature, impedes their practical applications. Here, we develop a terminal passivati...
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| Format: | Article |
| Language: | English |
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Wiley
2025-04-01
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| Series: | SmartMat |
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| Online Access: | https://doi.org/10.1002/smm2.1318 |
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| author | Jinbo He Jinjian Yan Tao Xue Liqian Yuan Yongxu Hu Zhongwu Wang Xiaosong Chen Yinan Huang Cheng Han Liqiang Li Wenping Hu |
| author_facet | Jinbo He Jinjian Yan Tao Xue Liqian Yuan Yongxu Hu Zhongwu Wang Xiaosong Chen Yinan Huang Cheng Han Liqiang Li Wenping Hu |
| author_sort | Jinbo He |
| collection | DOAJ |
| description | ABSTRACT Two‐dimensional (2D) materials, such as MoS2, show exceptional potential for next‐generation electronics. However, the poor stability of these materials, particularly under long‐term operations and high temperature, impedes their practical applications. Here, we develop a terminal passivation interface decoupling (TPID) strategy to significantly improve the stability of MoS2, by mitigating the interaction between the substrate and the 2D material within the in‐situ growth process. Specifically, the strong electron‐withdrawing terminal group hydroxyl, prevalent on the oxide substrate, is passivated by carbon groups. Due to this, the structure of MoS2 materials remains stable during long‐term storage, and its electronic devices, field‐effect transistors (FETs), show remarkable operational and high‐temperature (400°C) stability over 60 days, with much‐improved performance. For example, mobility increases from 9.69 to 85 cm2/(V·s), the highest value for bottom‐up transfer‐free single crystal MoS2 FETs. This work provides a new avenue to solve reliability issues of 2D materials and devices, laying a foundation for their applications in the electronic industry. |
| format | Article |
| id | doaj-art-a6f57c8f9fb34c4fb7d53363757c3694 |
| institution | OA Journals |
| issn | 2688-819X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley |
| record_format | Article |
| series | SmartMat |
| spelling | doaj-art-a6f57c8f9fb34c4fb7d53363757c36942025-08-20T02:30:06ZengWileySmartMat2688-819X2025-04-0162n/an/a10.1002/smm2.1318Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional SemiconductorsJinbo He0Jinjian Yan1Tao Xue2Liqian Yuan3Yongxu Hu4Zhongwu Wang5Xiaosong Chen6Yinan Huang7Cheng Han8Liqiang Li9Wenping Hu10Institute of Molecular Aggregation Science, School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin ChinaCollege of Physical Science and Technology Xiamen University Xiamen ChinaCenter for Analysis and Tests Tianjin University Tianjin ChinaInstitute of Molecular Aggregation Science, School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin ChinaInstitute of Molecular Aggregation Science, School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin ChinaInstitute of Molecular Aggregation Science, School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin ChinaInstitute of Molecular Aggregation Science, School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin ChinaInstitute of Molecular Aggregation Science, School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin ChinaSZU‐NUS Collaborative Innovation Center for Optoelectronic Science and Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale Optoelectronics Shenzhen University Shenzhen ChinaInstitute of Molecular Aggregation Science, School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin ChinaInstitute of Molecular Aggregation Science, School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Sciences Tianjin University Tianjin ChinaABSTRACT Two‐dimensional (2D) materials, such as MoS2, show exceptional potential for next‐generation electronics. However, the poor stability of these materials, particularly under long‐term operations and high temperature, impedes their practical applications. Here, we develop a terminal passivation interface decoupling (TPID) strategy to significantly improve the stability of MoS2, by mitigating the interaction between the substrate and the 2D material within the in‐situ growth process. Specifically, the strong electron‐withdrawing terminal group hydroxyl, prevalent on the oxide substrate, is passivated by carbon groups. Due to this, the structure of MoS2 materials remains stable during long‐term storage, and its electronic devices, field‐effect transistors (FETs), show remarkable operational and high‐temperature (400°C) stability over 60 days, with much‐improved performance. For example, mobility increases from 9.69 to 85 cm2/(V·s), the highest value for bottom‐up transfer‐free single crystal MoS2 FETs. This work provides a new avenue to solve reliability issues of 2D materials and devices, laying a foundation for their applications in the electronic industry.https://doi.org/10.1002/smm2.13182D materialshigh temperatureinterface decouplingstabilityterminal passivationtransistors |
| spellingShingle | Jinbo He Jinjian Yan Tao Xue Liqian Yuan Yongxu Hu Zhongwu Wang Xiaosong Chen Yinan Huang Cheng Han Liqiang Li Wenping Hu Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional Semiconductors SmartMat 2D materials high temperature interface decoupling stability terminal passivation transistors |
| title | Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional Semiconductors |
| title_full | Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional Semiconductors |
| title_fullStr | Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional Semiconductors |
| title_full_unstemmed | Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional Semiconductors |
| title_short | Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional Semiconductors |
| title_sort | terminal passivation induced interface decoupling for high stability two dimensional semiconductors |
| topic | 2D materials high temperature interface decoupling stability terminal passivation transistors |
| url | https://doi.org/10.1002/smm2.1318 |
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