Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional Semiconductors

Terminal Passivation–Induced Interface Decoupling for High‐Stability Two‐Dimensional Semiconductors

ABSTRACT Two‐dimensional (2D) materials, such as MoS2, show exceptional potential for next‐generation electronics. However, the poor stability of these materials, particularly under long‐term operations and high temperature, impedes their practical applications. Here, we develop a terminal passivati...

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Bibliographic Details
Main Authors: Jinbo He, Jinjian Yan, Tao Xue, Liqian Yuan, Yongxu Hu, Zhongwu Wang, Xiaosong Chen, Yinan Huang, Cheng Han, Liqiang Li, Wenping Hu
Format: Article
Language:English
Published: Wiley 2025-04-01
Series:SmartMat
Subjects:
2D materials
high temperature
interface decoupling
stability
terminal passivation
transistors
Online Access:https://doi.org/10.1002/smm2.1318
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https://doi.org/10.1002/smm2.1318

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