Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters
Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impurity scattering mechanisms on the mobility, as well...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2022-12-01
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| Series: | Приборы и методы измерений |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/790 |
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