A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure

A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure

Photodetectors (PDs) based on 4H silicon carbide (SiC) have garnered significant interest due to their exceptional optoelectronic properties. However, their photoresponse is typically restricted to the ultraviolet (UV) region, with limited light absorption beyond 380 nm, which constrains their utili...

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Bibliographic Details
Main Authors: Salah Abdo, Khalil As’ham, Ambali Alade Odebowale, Sanjida Akter, Amer Abdulghani, Ibrahim A. M. Al Ani, Haroldo Hattori, Andrey E. Miroshnichenko
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Applied Sciences
Subjects:
4H silicon carbide (SiC)
tantalum carbide (TaC)
near ultraviolet (NUV) photodetector
responsivity
Online Access:https://www.mdpi.com/2076-3417/15/2/970
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