Near-field terahertz time-domain spectroscopy for in-line electrical metrology of semiconductor integration processes for memory

Near-field terahertz time-domain spectroscopy for in-line electrical metrology of semiconductor integration processes for memory

Abstract Monitoring electrical properties in semiconductor integration processes is crucial in identifying electrical defects that determine the reliability and performance of metal oxide semiconductor field-effect transistors. A non-destructive in-line metrology technique using terahertz (THz) wave...

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Main Authors: Sunhong Jun, Inkeun Baek, Suhwan Park, Eun Hyuk Choi, Jongmin Yoon, Iksun Jeon, Yoonkyung Jang, Martin Priwisch, Wontae Kim, Suncheul Kim, Taejoong Kim, Taeyong Jo, Myungjun Lee, Sungyoon Ryu, Namil Koo, Yusin Yang
Format: Article
Language:English
Published: Nature Portfolio 2025-02-01
Series:Communications Engineering
Online Access:https://doi.org/10.1038/s44172-025-00356-y
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https://doi.org/10.1038/s44172-025-00356-y

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