Field-Effect Passivation of GaN-Based Blue Micro-Light-Emitting Diodes
We demonstrate field-effect passivation (FEP) of GaN-based blue <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> LEDs by incorporating an additional metal-oxide-semiconductor gate structure on the sidewalls. This approach allows for ac...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10930472/ |
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