Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities

Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities

We compare the optical properties of four <i>pin</i> diode samples differing by built-in field direction and width of the In<sub>0.17</sub>Ga<sub>0.83</sub>N quantum well in the active layer: two diodes with standard <i>nip</i> layer sequences and 2.6...

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Bibliographic Details
Main Authors: Artem Bercha, Mikołaj Chlipała, Mateusz Hajdel, Grzegorz Muzioł, Marcin Siekacz, Henryk Turski, Witold Trzeciakowski
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Nanomaterials
Subjects:
nitride LEDs
quantum-confined Stark effect
photoluminescence
photocurrent
screening effects
wide and narrow InGaN quantum wells
Online Access:https://www.mdpi.com/2079-4991/15/2/112
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