Mechanism of OH*-Modified 4H-SiC Surface with Scratches Based on ReaxFF MD Simulation

Mechanism of OH*-Modified 4H-SiC Surface with Scratches Based on ReaxFF MD Simulation

OH* generated through plasma catalysis offers several advantages, including a long survival time, high modification efficiency, and environmental friendliness. Consequently, a plasma-assisted polishing technology has rapidly developed. Previous studies exploring the interaction mechanism between OH*...

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Bibliographic Details
Main Authors: Dongxiao Yan, Hui Huang, Mingpu Xue, Nian Duan
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Micromachines
Subjects:
plasma
ReaxFF MD
4H-SiC
OH*
Online Access:https://www.mdpi.com/2072-666X/16/2/184
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