On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits

On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits

Abstract This study investigates the possibility of the carbon nanotube (CNT)‐based through‐silicon vias (TSVs) for improving power integrity of 3‐D integrated circuits (3‐D ICs). The circuit model is developed for 2‐bit CNT TSV and validated through the full‐wave electromagnetic simulator HFSS simu...

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Bibliographic Details
Main Authors: Qing‐Hao Hu, Wen‐Sheng Zhao, Kai Fu, Da‐Wei Wang, Gaofeng Wang
Format: Article
Language:English
Published: Wiley 2021-01-01
Series:IET Circuits, Devices and Systems
Subjects:
carbon nanotubes
equivalent circuits
integrated circuit interconnections
integrated circuit modelling
three‐dimensional integrated circuits
Online Access:https://doi.org/10.1049/cds2.12010
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https://doi.org/10.1049/cds2.12010

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