Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers
The paper analyzes the reasons and factors that allow avoiding faceting of non-oriented linear zones. It is shown that in the manufacture of semiconductor chips with a large perimeter and a reverse voltage of 2000 V, the conditions sine qua non to create isolating walls on silicon wafers with an ori...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2021-12-01
|
| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/70 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850211314273615872 |
|---|---|
| author | Оlекsіі Polukhin Vitalii Kravchina |
| author_facet | Оlекsіі Polukhin Vitalii Kravchina |
| author_sort | Оlекsіі Polukhin |
| collection | DOAJ |
| description | The paper analyzes the reasons and factors that allow avoiding faceting of non-oriented linear zones. It is shown that in the manufacture of semiconductor chips with a large perimeter and a reverse voltage of 2000 V, the conditions sine qua non to create isolating walls on silicon wafers with an orientation different from (111) are to form an ensemble of linear zones by the method of high-temperature selective forced wetting (HSV) and to fulfill a number of requirements to the “thermomigration” photomask and zones immersion stage during TM at high temperatures. It is shown that these factors provide a stable migration of an ensemble of linear zones through wafers (110) even in a stationary temperature gradient field.
For the first time in the world, the authors practically demonstrate the possibility of stable migration of an ensemble of non-oriented linear zones through silicon (110) in a stationary temperature gradient conditions, outlining the conditions and factors necessary for this process. It is assumed that when the conditions for the formation of linear zones and their immersion are met, the crystallographic orientation of the silicon wafers does not matter at all. |
| format | Article |
| id | doaj-art-a3e8dcf9d6f84ce0b0ae771e98364460 |
| institution | OA Journals |
| issn | 2225-5818 2309-9992 |
| language | English |
| publishDate | 2021-12-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj-art-a3e8dcf9d6f84ce0b0ae771e983644602025-08-20T02:09:35ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182309-99922021-12-015–6334010.15222/TKEA2021.5-6.3370Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafersОlекsіі Polukhin0Vitalii Kravchina1Element-Preobrazovatel, LtdMykolaiv Polytechnic Vocational CollegeThe paper analyzes the reasons and factors that allow avoiding faceting of non-oriented linear zones. It is shown that in the manufacture of semiconductor chips with a large perimeter and a reverse voltage of 2000 V, the conditions sine qua non to create isolating walls on silicon wafers with an orientation different from (111) are to form an ensemble of linear zones by the method of high-temperature selective forced wetting (HSV) and to fulfill a number of requirements to the “thermomigration” photomask and zones immersion stage during TM at high temperatures. It is shown that these factors provide a stable migration of an ensemble of linear zones through wafers (110) even in a stationary temperature gradient field. For the first time in the world, the authors practically demonstrate the possibility of stable migration of an ensemble of non-oriented linear zones through silicon (110) in a stationary temperature gradient conditions, outlining the conditions and factors necessary for this process. It is assumed that when the conditions for the formation of linear zones and their immersion are met, the crystallographic orientation of the silicon wafers does not matter at all.https://tkea.com.ua/index.php/journal/article/view/70temperature gradientthrough insulationliquid linear zones al sipower semiconductor devicesthermomigration |
| spellingShingle | Оlекsіі Polukhin Vitalii Kravchina Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers Tekhnologiya i Konstruirovanie v Elektronnoi Apparature temperature gradient through insulation liquid linear zones al si power semiconductor devices thermomigration |
| title | Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers |
| title_full | Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers |
| title_fullStr | Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers |
| title_full_unstemmed | Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers |
| title_short | Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers |
| title_sort | thermomigration of non oriented aluminium rich liquid zones through 110 silicon wafers |
| topic | temperature gradient through insulation liquid linear zones al si power semiconductor devices thermomigration |
| url | https://tkea.com.ua/index.php/journal/article/view/70 |
| work_keys_str_mv | AT oleksíípolukhin thermomigrationofnonorientedaluminiumrichliquidzonesthrough110siliconwafers AT vitaliikravchina thermomigrationofnonorientedaluminiumrichliquidzonesthrough110siliconwafers |