Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers
This study reports on the electrical transport properties of NbN/HfO2 bilayers grown sequentially by reactive sputtering on c-Al2O3 substrates. An epitaxial (111) NbN layer, 10 nm thick, was deposited at 450 °C using an N2/argon mixture. Subsequently, an HfO2 layer with a nominal thickness of 10 nm...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-07-01
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| Series: | Next Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2949822825000991 |
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