Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature

Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature

This paper presents a theoretical analysis of npBp infrared (IR) barrier avalanche photodiode (APD) performance operating at 300 K based on a quaternary compound made of A<sup>III</sup>B<sup>V</sup>—InGaAsSb, lattice-matched to the GaSb substrate with a <i>p</i>-t...

Full description

Saved in:
Bibliographic Details
Main Authors: Tetiana Manyk, Jarosław Rutkowski, Krzysztof Kłos, Nathan Gajowski, Sanjay Krishna, Piotr Martyniuk
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Sensors
Subjects:
SWIR
IR detectors
avalanche detectors
APDs
impact multiplication gain
InGaAsSb
Online Access:https://www.mdpi.com/1424-8220/25/7/2255
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://www.mdpi.com/1424-8220/25/7/2255

Similar Items