Revisiting On-State Resistance as TSEP for Discrete SiC MOSFETs: Steps Towards the In-Circuit Approach
The knowledge of device junction temperature in real time allows to maximize the power density of power electronics converters, by means of active derating and dynamic overloading. Since junction temperature cannot be measured directly without altering the device, temperature-sensitive electric para...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10964525/ |
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