Diffuse and drift movement of electrons in n-type silicon, irradiated by reactor fast neutrons
The area of temperatures of diffuse and drift movement electrons in n-Si, grown up by Czochralski method after irradiation by the reactor fast neutrons is considered. Temperature dependencies of carrier concentrations in the conducting matrix and in volume of samples are described and the drift barr...
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2011-06-01
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| Series: | Ядерна фізика та енергетика |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/12.2/Articles_PDF/jnpae-2011-12-0167-Dolgolenko.pdf |
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