Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped SrTiO3 Substrate
Epitaxial NiO film was grown on 0.7% Nb-doped SrTiO3 substrates by pulsed laser deposition. The I-V characteristics of Ag/NiO/Nb-SrTiO3/In device show reproducible and pronounced bipolar resistive switching without forming process which was induced by the NiO/Nb-SrTiO3 junctions, and the resistive s...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2012/364376 |
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