Low Frequency Noise of Tantalum Capacitors
A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model of Ta−Ta2O5−MnO2 MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510212341 |
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